Тип публикации: статья из журнала
Год издания: 2008
Идентификатор DOI: 10.1007/s11182-009-9139-1
Аннотация: It is proposed to use chromium-compensated semi-insulating GaAs detectors for detecting high-power nanosecond X-ray pulses. An X-ray facility based on a small direct-acting electron accelerator "Sinus-150" developed at the Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, Tomsk was useПоказать полностьюd as a source of pulsed X-ray radiation. The detectors are shown to detect 5 ns pulses under exposure to 30 mR radiation during one pulse without distortions. In so doing, one-ampere currents flow through the active detector area 0.2 cm2. It is found that the physical processes limiting the working capacity of GaAs detectors are due to capture of nonequilibrium electrons and holes by deep centers. At the nonequilibrium charge-carrier concentrations higher than 5•1013 cm3, nonuniform distributions of the electric field are formed in the active region and these can result in distortion of the output detector signal shape. © 2008 Springer Science+Business Media, Inc.
Журнал: Russian Physics Journal
Выпуск журнала: Vol. 51, Is. 9
Номера страниц: 897-901