Тип публикации: статья из журнала

Год издания: 2022

Идентификатор DOI: 10.3390/ma15041449

Ключевые слова: cracked template, durability, electroplating, embedded mesh, photocurable resin, transparent electromagnetic interference (emi) shielding films

Аннотация: Embedded copper mesh coatings with low sheet resistance and high transparency were formed using a low-cost Cu seed mesh obtained with a magnetron sputtering on a cracked template, and subsequent operations electroplating and embedding in a photocurable resin layer. The influence of the mesh size on the optoelectric characteristics Показать полностьюand the electromagnetic shielding efficiency in a wide frequency range is considered. In optimizing the coating properties, a shielding efficiency of 49.38 dB at a frequency of 1 GHz, with integral optical transparency in the visible range of 84.3%, was obtained. Embedded Cu meshes have been shown to be highly bending stable and have excellent adhesion strength. The combination of properties and economic costs for the formation of coatings indicates their high prospects for practical use in shielding transparent objects, such as windows and computer monitors. © 2022 by the authors. Licensee MDPI, Basel, Switzerland.

Журнал: Materials

Выпуск журнала: Vol. 15, Is. 4

Номера страниц: 1449

ISSN журнала: 19961944

Издатель: MDPI

• Voronin A.S. (Department of Molecular Electronics, Federal Research Center «Krasnoyarsk Scientific Center», Siberian Branch, Russian Academy of Sciences (FRC KSC SB RAS), Krasnoyarsk, 660036, Russian Federation, School of Engineering and Construction, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation, Laboratory of EMI Shielding Materials, Bauman Moscow State Technical University, Moscow, 105005, Russian Federation)
• Fadeev Y.V. (Department of Molecular Electronics, Federal Research Center «Krasnoyarsk Scientific Center», Siberian Branch, Russian Academy of Sciences (FRC KSC SB RAS), Krasnoyarsk, 660036, Russian Federation, School of Engineering and Construction, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
• Makeev M.O. (Laboratory of EMI Shielding Materials, Bauman Moscow State Technical University, Moscow, 105005, Russian Federation)
• Mikhalev P.A. (Laboratory of EMI Shielding Materials, Bauman Moscow State Technical University, Moscow, 105005, Russian Federation)
• Osipkov A.S. (Laboratory of EMI Shielding Materials, Bauman Moscow State Technical University, Moscow, 105005, Russian Federation)
• Provatorov A.S. (Laboratory of EMI Shielding Materials, Bauman Moscow State Technical University, Moscow, 105005, Russian Federation)
• Ryzhenko D.S. (Laboratory of EMI Shielding Materials, Bauman Moscow State Technical University, Moscow, 105005, Russian Federation)
• Yurkov G.Y. (Laboratory of EMI Shielding Materials, Bauman Moscow State Technical University, Moscow, 105005, Russian Federation, Laboratory of Reinforced Plastics, N.N. Semenov Federal Research Center of Chemical Physics, Russian Academy of Sciences, Moscow, 119991, Russian Federation)
• Simunin M.M. (Department of Molecular Electronics, Federal Research Center «Krasnoyarsk Scientific Center», Siberian Branch, Russian Academy of Sciences (FRC KSC SB RAS), Krasnoyarsk, 660036, Russian Federation, School of Non-Ferrous Metals and Materials Science, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation, Department of Aircraft, Reshetnev Siberian University Science and Technology, Krasnoyarsk, 660037, Russian Federation)
• Karpova D.V. (Department of Molecular Electronics, Federal Research Center «Krasnoyarsk Scientific Center», Siberian Branch, Russian Academy of Sciences (FRC KSC SB RAS), Krasnoyarsk, 660036, Russian Federation)
• Lukyanenko A.V. (School of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation, Laboratory of Radiospectroscopy and Spintronics, L.V. Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)
• Kokh D. (Department of Molecular Electronics, Federal Research Center «Krasnoyarsk Scientific Center», Siberian Branch, Russian Academy of Sciences (FRC KSC SB RAS), Krasnoyarsk, 660036, Russian Federation, Scientific and Training Center of Space Research and High Technologies Institute, Reshetnev Siberian University Science and Technology, Krasnoyarsk, 660037, Russian Federation)
• Bainov D.D. (Laboratory for Radiation and Plasma Technologies, Tomsk Polytechnic University, Tomsk, 634050, Russian Federation, Laboratory of Radiophotonics, V.E. Zuev Institute of Atmospheric Optics, Siberian Branch, Russian Academy of Science, Tomsk, 634055, Russian Federation)
• Tambasov I.A. (Laboratory of Photonics of Molecular Systems, L.V. Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation, LLC Research and Production Company “Spectehnauka”, Krasnoyarsk, 660043, Russian Federation)
• Nedelin S.V. (School of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation, LLC Research and Production Company “Spectehnauka”, Krasnoyarsk, 660043, Russian Federation)
• Zolotovsky N.A. (School of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation, LLC Research and Production Company “Spectehnauka”, Krasnoyarsk, 660043, Russian Federation)
• Khartov S.V. (Department of Molecular Electronics, Federal Research Center «Krasnoyarsk Scientific Center», Siberian Branch, Russian Academy of Sciences (FRC KSC SB RAS), Krasnoyarsk, 660036, Russian Federation)

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