Тип публикации: статья из журнала

Год издания: 2021

Идентификатор DOI: 10.1007/s11837-020-04522-9

Аннотация: Phase formation in a solid state reaction in Al/Cu bilayer and multilayer thin films was studied by the methods of in situ transmission electron microscopy, electron diffraction, simultaneous thermal analysis and x-ray diffraction. It was established that the phase formation sequences in the (Al/Cu)_n (n = 2, 15) multilayer thin films (θ-Al₂Cu → γ₁-Al₄Cu₉ → η₂-AlCu) and Al/Cu bilayer thin films (θ-Al₂Cu → η₂-AlCu → γ₁-Al₄Cu₉) were different. It was assumed that the phase formation process in the thin films was strongly affected by a number of copper/aluminum interfaces due to the changes of aluminum and copper diffusion current.

Журнал: Journal of the Minerals Metals & Materials Society (JOM)

ISSN журнала: 10474838

Издатель: J O M Institute

• Moiseenko E.T. (Siberian Federal University)
• Zharkov S.M. (Kirensky Institute of Physics,Federal Research Center KSC SB RAS)
• Altunin R.R. (Siberian Federal University)
• Belousov O.V. (Institute of Chemistry and Chemical Technology,Federal Research Center KSC SB RAS)
• Zeer G.M. (Siberian Federal University)
• Volochaev M.N. (Reshetnev Siberian State University of Science and Technology)
• Solovyov L.A. (Institute of Chemistry and Chemical Technology,Federal Research Center KSC SB RAS)
• Yumashev V.V. (Institute of Chemistry and Chemical Technology,Federal Research Center KSC SB RAS)

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