Тип публикации: статья из журнала

Год издания: 1998

Аннотация: Semiempirical calculations of hydrogen interaction with the clusters simulating ordered Si(100) and Ge(100) surfaces are presented. Desorption and adsorption pathways for low and high monohydride and dihydride phase coverages are discussed. We find that desorption from Si (100)-2×1:H passes through an symmetric transitional state at low coverages and through the symmetric one at high coverages. For Ge(100)-2×1:H surface desorption reaction follows asymmetric path at any surface coverage. At low coverage the desorption reaction from dihydride phase Si(100)-1×1:H looks like SiH2 + SiH₂ →2SiH + H₂, and at high coverage -SiH₂ + SiH₂ →Si + SiH₂ + H₂ →2SiH + H₂.

Журнал: Physics of Low-Dimensional Structures (PLDS)

Выпуск журнала: Т. 1998, № 9-10

Номера страниц: 65-76

ISSN журнала: 02043467

Место издания: Черноголовка

Издатель: Институт физики твердого тела РАН

• Gorban A.N. (Solid State Electronics M.,Zaporozhye State University)
• Yanovsky A.S. (Solid State Electronics M.,Zaporozhye State University)
• Kolomoets S.V. (Solid State Electronics M.,Zaporozhye State University)

• РИНЦ (eLIBRARY.RU)