Тип публикации: статья из журнала

Год издания: 1979

Идентификатор DOI: 10.1007/BF00894243

Ключевые слова: ANNEALING, SEMICONDUCTING SILICON

Аннотация: In the high-temperature annealing of a silicon single crystal with inclusions of secondary phase-Cu-Si or Al-Si- in a dc field, the inclusions are seen to migrate toward one of the electrodes. Aluminum-based inclusions move toward the negative electrode and copper-based inclusions toward the positive electrode. For each type of incПоказать полностьюlusion in the investigated temperature range (900-1100Р’В°C), the value of the relative-velocity of inclusion migration with respect to the initial area is given. The mechanism of migration is described. Р’В© 1979 Plenum Publishing Corporation.

Журнал: Soviet Physics Journal

Выпуск журнала: Vol. 21, Is. 10

Номера страниц: 1271-1275

• Orlov A.M. (M. I. Kalinin Krasnoyarsk Institute of Nonferrous Metals, Russia)
• Belashchenko D.K. (M. I. Kalinin Krasnoyarsk Institute of Nonferrous Metals, Russia)
• Sokolov V.I. (M. I. Kalinin Krasnoyarsk Institute of Nonferrous Metals, Russia)

• Scopus