Another mechanism for the insulator-metal transition observed in Mott insulators


Тип публикации: статья из журнала

Год издания: 2008

Идентификатор DOI: 10.1103/PhysRevB.77.155112

Аннотация: The two widely accepted mechanisms of the insulator-metal Mott-Hubbard transitions which have been considered up until now are driven by the band-filling or bandwidth effects. We found a different mechanism of the Mott-Hubbard insulator-metal transition, which is controlled instead by the changes in the Mott-Hubbard energy U. In coПоказать полностьюntrast to the changes in the bandwidth W in the "bandwidth control" scenario or to the variations of the band-filling n parameter in the "band-filling" scenario, a dramatic decrease in the Mott-Hubbard energy U plays the key role in this mechanism. We have experimentally observed this type of the insulator metal transition in the transition metal oxide BiFeO(3). The decrease in the Mott-Hubbard energy is caused by the high-spin-low-spin crossover in the electronic d shell of 3d transition metal ion Fe(3+) with d(5) configuration under high pressure. The pressure-induced spin crossover in BiFeO(3) was investigated and confirmed by synchrotron x-ray diffraction, nuclear forward scattering, and x-ray emission methods. The insulator-metal transition at the same pressures was found by the optical absorption and dc resistivity measurements.

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Выпуск журнала: Vol. 77, Is. 15

ISSN журнала: 10980121

Место издания: COLLEGE PK



  • Gavriliuk A.G. (Institute for High Pressure Physics,RAS)
  • Struzhkin V.V. (Geophysical Laboratory,Carnegie Institution of Washington)
  • Lyubutin I.S. (Institute of Crystallography,Russian Academy of Sciences)
  • Ovchinnikov S.G. (Siberian Federal University)
  • Hu M.Y. (HPCAT,Carnegie Institution of Washington,APS)
  • Chow P. (HPCAT,Carnegie Institution of Washington,APS)