Тип публикации: статья из журнала
Год издания: 1996
Аннотация: Ordinary transmission and high resolution electron microscopy are used to study a number of epitaxial II-VI(001)GaAs heterostructures with tensile stresses in the epitaxial layer and compression and almost complete compensation of mismatch stress at the layer-substrate boundary. In ZnS/GaAs, (Cd,Zn)Te/GaAs, and (Cd,Zn)S/GaAs epitaxПоказать полностьюial layers an anisotropy is observed in the distribution of such characteristic defects as microtwins, which are observed exclusively in the [110] projection, while their propagation in the epitaxial layer is well explained by a growth model. At the same time, observations of the initial stage of twinning in (Hg,Mn)Te suggests that deformation mechanisms must also be taken into account in the first stage of microtwin formation. The need to separate deformation and growth processes during microtwin formation is emphasized. © 1996 American Institute of Physics.
Журнал: Physics of the Solid State
Выпуск журнала: Vol. 38, Is. 1
Номера страниц: 160-165