Тип публикации: статья из журнала
Год издания: 2011
Идентификатор DOI: 10.1134/S1063776111060070
Ключевые слова: Antiferromagnetic coupling, Colossal magnetoresistance effect, IV characteristics, Metallic contacts, Potential profiles, Spectral characteristics, Spin dependent transport, Spin dimer, Spin moments, Spin-dependent electron transport, Spin-flip process, Tight-binding approximations, Transmission coefficients, Antiferromagnetism, Colossal magnetoresistance, Current voltage characteristics, Electric resistance, Nanostructures, Transport properties, Magnetic field effects
Аннотация: The transport properties and current-voltage (I-V) characteristics of a system of spin dimers with antiferromagnetic coupling arranged between metallic contacts are investigated in the tight binding approximation using the Landauer-Buttiker formalism. It is shown that the s-d(f) exchange interaction between the spin moments of the Показать полностьюelectrons being transported and the spins of the nanostructure leads to the formation of a potential profile as well as its variation due to spin-flip processes. As a result, the spin-dependent transport becomes inelastic, and the transmission coefficient and the I-V characteristic are strongly modified. It is found that the application of a magnetic field induces additional transparency peaks in the spectral characteristic of the system and causes the colossal magnetoresistance effect.
Журнал: JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
Выпуск журнала: Vol. 113, Is. 2
Номера страниц: 266-275
ISSN журнала: 10637761
Место издания: NEW YORK
Издатель: MAIK NAUKA/INTERPERIODICA/SPRINGER