Тип публикации: статья из журнала

Год издания: 2015

Идентификатор DOI: 10.1039/c4cp04646c

Аннотация: In the present study, we have examined the interaction between a suspension of graphene in dimethylformamide and an aqueous solution of hydrofluoric acid, which was found to result in partial fluorination of suspension flakes. A considerable decrease in the thickness and lateral size of the graphene flakes (up to 1-5 monolayers in Показать полностьюthickness and 100-300 nm in diameter) with increasing duration of fluorination treatment is found to be accompanied by a simultaneous transition of the flakes from the conducting to the insulating state. Smooth and uniform insulating films with a roughness of ?2 nm and thicknesses down to 20 nm were deposited from the suspension on silicon. The electrical and structural properties of the films suggest their use as insulating elements in thin-film nano- and microelectronic device structures. In particular, it was found that the films prepared from the fluorinated suspension display rather high breakdown voltages (field strength of (1-3) ? 106 V cm-1), ultralow densities of charges in the film and at the interface with the silicon substrate in metal-insulator-semiconductor structures (?(1-5) ? 1010 cm-2). Such excellent characteristics of the dielectric film can be compared only to well-developed SiO<inf>2</inf> layers. The films from the fluorinated suspension are cheap, practically feasible and easy to produce. This journal is © the Owner Societies.

Журнал: Physical Chemistry Chemical Physics

Выпуск журнала: Vol. 17, Is. 20

Номера страниц: 13257-13266

• Nebogatikova N.A. (Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Division Acad., Lavrent'ev Avenue, 13, Novosibirsk, Russian Federation)
• Antonova I.V. (Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Division Acad., Lavrent'ev Avenue, 13, Novosibirsk, Russian Federation, Novosibirsk State University, Pirogov Street 2, Novosibirsk, Russian Federation)
• Prinz V.Y. (Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Division Acad., Lavrent'ev Avenue, 13, Novosibirsk, Russian Federation)
• Kurkina I.I. (Ammosov North-Eastern Federal University, Belinskii Street 58, Yakutsk, Russian Federation)
• Vdovin V.I. (Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Division Acad., Lavrent'ev Avenue, 13, Novosibirsk, Russian Federation)
• Aleksandrov G.N. (Ammosov North-Eastern Federal University, Belinskii Street 58, Yakutsk, Russian Federation)
• Timofeev V.B. (Ammosov North-Eastern Federal University, Belinskii Street 58, Yakutsk, Russian Federation)
• Smagulova S.A. (Ammosov North-Eastern Federal University, Belinskii Street 58, Yakutsk, Russian Federation)
• Zakirov E.R. (Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Division Acad., Lavrent'ev Avenue, 13, Novosibirsk, Russian Federation)
• Kesler V.G. (Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Division Acad., Lavrent'ev Avenue, 13, Novosibirsk, Russian Federation)

• Scopus