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Weak localization and size effects in thin In2O3 films prepared by autowave oxidation

Описание

Тип публикации: статья из журнала

Год издания: 2016

Идентификатор DOI: 10.1016/j.physe.2016.06.005

Ключевые слова: Thin indium oxide films, Weak localization, Electron-electron interaction, Disordered semiconductors, Nanostructured films, Phase-coherent length, Amorphous films, Crystal structure, Electron-electron interactions, High resolution transmission electron microscopy, Indium, Magnetoresistance, Nanocomposite films, Nanocomposites, Temperature measurement, Thin films, Transmission electron microscopy, Indium oxide films, Phase coherent, Oxide films

Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to dПоказать полностьюetermine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.

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Издание

Журнал: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Выпуск журнала: Vol. 84

Номера страниц: 162-167

ISSN журнала: 13869477

Место издания: AMSTERDAM

Издатель: ELSEVIER SCIENCE BV

Персоны

  • Tambasov I.A. (Kirensky Institute of Physics,Siberian Branch,Russian Academy of Sciences)
  • Tarasov A.S. (Siberian Federal University)
  • Volochaev M.N. (Reshetnev Siberian State Aerospace University)
  • Rautskii M.V. (Kirensky Institute of Physics,Siberian Branch,Russian Academy of Sciences)
  • Myagkov V.G. (Kirensky Institute of Physics,Siberian Branch,Russian Academy of Sciences)
  • Bykova L.E. (Kirensky Institute of Physics,Siberian Branch,Russian Academy of Sciences)
  • Zhigalov V.S. (Reshetnev Siberian State Aerospace University)
  • Matsynin A.A. (Kirensky Institute of Physics,Siberian Branch,Russian Academy of Sciences)
  • Tambasova E.V. (Reshetnev Siberian State Aerospace University)

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