Перевод названия: Betavoltaic converter based on heteroepitaxial GaN structures
Тип публикации: доклад, тезисы доклада, статья из сборника материалов конференций
Конференция: XXV Международная научно-техническая конференция и школа по фотоэлектронике и приборам ночного видения; Москва; Москва
Год издания: 2018
Аннотация: To create modern microelectronic devices used in robotics, medicine, space technology, etc., miniature electric power sources that work for a long period of time are needed. Radioisotope energy sources are well suited to this task and have a number of advantages over other sources. First of all, this is the service life, since the Показать полностьюtime of continuous operation and the energy intensity of the isotopes depend only on the half-life. Recently, sources of nutrition based on beta-isotopes, in particular, nickel-63 and carbon14, have developed a great deal. At present, devices are being actively studied on the basis of three methods of converting the energy of radiation into electrical, such as: direct conversion of beta radiation by classical semiconductor converters; direct conversion of beta radiation by nanotube-based converters; with an intermediate phase of transformation, using light or mechanical energy (the energy of oscillations of different cantilevers). The investigated source uses the first method, realized with the use of heteroepitaxial GaN structures.
Журнал: XXV Международная научно-техническая конференция и школа по фотоэлектронике и приборам ночного видения
Выпуск журнала: 2
Номера страниц: 366-369
Издатель: "ОФСЕТ МОСКВА"