Тип публикации: статья из журнала (материалы конференций, опубликованные в журналах)
Конференция: Euro-Asian Symposium on Trends in MAGnetism: Nanomagnetism, EASTMAG 2013; Vladivostok, Russian Federation; Vladivostok, Russian Federation
Год издания: 2014
Идентификатор DOI: 10.4028/www.scientific.net/SSP.215.348
Ключевые слова: Bilayer structure ferromagnetic metal/semiconductor, Cobalt, Coercivity, Germanium interface, Magnetization, Magnetoresistance, Schottky barrier, Coercive force, Magnetic films, Nanomagnetics, Schottky barrier diodes, Bi-layer films, Bi-layer structure, Magnetic and electrical properties, Magnetic behavior, Magnetic layers, Magneto-resistive effect, Schottky barriers, Electric properties
Аннотация: The magnetic and electrical properties of Co/Ge bilayer films are experimentally studied. It is established that at the Co/Ge interface an intermediate magnetic layer forms. This layer affects the magnetic behavior and magnetoresistive effect in the investigated structures. © (2014) Trans Tech Publications, Switzerland.
Журнал: Solid State Phenomena
Выпуск журнала: Vol. 215
Номера страниц: 348-351