Тип публикации: статья из журнала

Год издания: 2018

Идентификатор DOI: 10.1039/c8ra01079j

Журнал: RSC Advances

Выпуск журнала: Т. 8, № 18

Номера страниц: 9946-9955

ISSN журнала: 20462069

• Atuchin V.V. (Laboratory of Semiconductor and Dielectric Materials,Novosibirsk State University)
• Liang F. (Key Laboratory of Functional Crystals and Laser Technology,Technical Institute of Physics and Chemistry,Chinese Academy of Sciences)
• Jiang X. (Key Laboratory of Functional Crystals and Laser Technology,Technical Institute of Physics and Chemistry,Chinese Academy of Sciences)
• Lin Z. (Key Laboratory of Functional Crystals and Laser Technology,Technical Institute of Physics and Chemistry,Chinese Academy of Sciences)
• Grazhdannikov S. (Laboratory of Functional Materials,Novosibirsk State University)
• Isaenko L.I. (Laboratory of Functional Materials,Novosibirsk State University)
• Krinitsin P.G. (Laboratory of Functional Materials,Novosibirsk State University)
• Molokeev M.S. (Department of Physics,Far Eastern State Transport University)
• Prosvirin I.P. (Surface Science Laboratory,Boreskov Institute of Catalysis,SB RAS)

• Ядро РИНЦ (eLIBRARY.RU)