Тип публикации: статья из журнала (материалы конференций, опубликованные в журналах)
Конференция: Moscow International Symposium on Magnetism, MISM 2014; Moscow, Russian Federation; Moscow, Russian Federation
Год издания: 2015
Идентификатор DOI: 10.4028/www.scientific.net/SSP.233-234.451
Ключевые слова: Bias, Magnetoimpedance, MIS-structure, Magnetic fields, Schottky barrier diodes, Temperature distribution, Applied magnetic fields, Giant magneto impedance effect, Lower temperatures, Magneto-impedance, Magneto-impedance effects, MIS structure, Temperature dependence, Magnetism
Аннотация: We report the giant magnetoimpedance effect in a ferromagnetic metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/n-Si structure. It was established that the applied magnetic field strongly influences the impedance of the structure in the temperature range 10—30 K. In this range, there is the pПоказать полностьюronounced peak in the temperature dependence of the real part of the impedance at frequencies from 10 Hz to 1 MHz. The effect of the magnetic field manifests itself as a shift of the peak of the real part of the impedance. Under the action of a bias voltage of 5 V, the peak of the real part of the impedance similarly shifts toward lower temperatures with and without applied magnetic field. © (2015) Trans Tech Publications, Switzerland.
Журнал: Solid State Phenomena
Выпуск журнала: Vol. 233-234
Номера страниц: 451-455