Тип публикации: доклад, тезисы доклада, статья из сборника материалов конференций

Конференция: International Russian-Chinese Symposium on Advanced Materials and Processes

Год издания: 2019

Идентификатор DOI: 10.1088/1742-6596/1347/1/012006

Аннотация: The present work is devoted to magnetic transport in Fe/SiO2/p-Si, Mn/SiO2/p-Si and Fe3Si/p-Si hybrid structure. For Mn/SiO2/p-Si diode extremely large values of magnetoresistance were observed (105 % for AC and 107 % for DC) which is explained by impact ionization process that can be suppressed by the magnetic field. Lateral photoПоказать полностьюvoltaic effect in Fe/SiO2/p-Si have also shown a strong dependence on the magnetic field in low-temperature region (the relative change of photovoltage exceeded 103 %). In Fe3Si/p-Si spin accumulation was found via 3-terminal Hanle measurements. We believe that the magnetic field affects electric transport through Lorentz force and through the interface states which are localized at the insulator/semiconductor or metal/semiconductor interfaces. Such states play a decisive role in magnetotrasnport as their energy can be controlled by a magnetic field. In Fe3Si/p-Si they also participate in spin-dependent tunneling, causing spin injection from the Fe3Si film into the silicon. © Published under licence by IOP Publishing Ltd.

Журнал: Journal of Physics: Conference Series

Выпуск журнала: Vol. 1347, Is. 1

Номера страниц: 12006

ISSN журнала: 17426588

Издатель: Institute of Physics Publishing

• Volkov N.V. (Kirensky Institute of Physics of the Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)
• Bondarev I.A. (Kirensky Institute of Physics of the Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
• Tarasov A.S. (Kirensky Institute of Physics of the Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)
• Rautskii M.V. (Kirensky Institute of Physics of the Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)
• Lukyanenko A.V. (Kirensky Institute of Physics of the Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
• Smolyakov D.A. (Kirensky Institute of Physics of the Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)
• Varnakov S.N. (Kirensky Institute of Physics of the Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)
• Ovchinnikov S.G. (Kirensky Institute of Physics of the Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)

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