Тип публикации: статья из журнала

Год издания: 2012

Идентификатор DOI: 10.1134/S0036024412070138

Ключевые слова: silicon carbide, defects, adatoms, density functional method, Carbon ad-atoms, Density-functional methods, Homoepitaxial growth, Low qualities, Material property, Structural defect, Epitaxial growth, Monolayers, Vacancies

Аннотация: It is noted that the development of semiconductor SiC-electronics is prevented by a low quality of grown silicon carbide single crystals. It is found that structural defects of a substrate penetrating into an epitaxial layer upon subsequent homoepitaxial growth can considerably degrade a device's characteristics. We investigate theПоказать полностьюeffect of the deformation of a hexagonal SiC monolayer on vacancy stability and material properties, and study the processes of silicon and carbon adatom migration over a surface of SiC.

Журнал: RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A

Выпуск журнала: Vol. 86, Is. 7

Номера страниц: 1091-1095

ISSN журнала: 00360244

Место издания: NEW YORK

Издатель: MAIK NAUKA/INTERPERIODICA/SPRINGER

• Kuzubov A.A. (Siberian State Technological University)
• Eliseeva N.S. (Siberian Federal University)
• Tomilin F.N. (Kirensky Institute of Physics,Siberian Branch,Russian Academy of Sciences)
• Tolstaya A.V. (Siberian Federal University)
• Krasnov P.O. (Siberian State Technological University)
• Fedorov A.S. (Kirensky Institute of Physics,Siberian Branch,Russian Academy of Sciences)

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