Тип публикации: статья из журнала
Год издания: 1996
Аннотация: Transmission and high-resolution electron microscopy and low-energy beams are used to study the effect of doping Cu, P, In, and Cl impurities on the formation of structural defects in CdTe irradiated by 3-5 keV Ar+ and I+ ions and 400 keV electrons. It is found that in the doped samples besides ordinary dislocation loops, laminar pПоказать полностьюrecipitates are formed which Moire contrast analysis shows to be compounds of the impurity type Cd in CdTe(P) and impurity Te in CdTe(In,Cu). © 1996 American Institute of Physics.
Журнал: Physics of the Solid State
Выпуск журнала: Vol. 38, Is. 4
Номера страниц: 692-697