Тип публикации: статья из журнала

Год издания: 2015

Идентификатор DOI: 10.1134/S1063782615040211

Аннотация: The electroluminescence efficiency of silicon light-emitting diode structures with several layers of ?-FeSi<inf>2</inf> nanocrystallites embedded in the p-n junction is investigated. The nanocrystallites were formed by either solid-phase epitaxy or a combination of reactive and solid-phase epitaxy. For the structures in which the nПоказать полностьюanocrystallites were formed by the combined method, electroluminescence is observed only at low temperatures (below 70K). This is indicative of a high concentration of defects acting as nonradiative-recombination centers. For the structures with nanocrystallites formed by solid-phase epitaxy, intense electroluminescence is observed up to room temperature. The dependence of the electroluminescence intensity on the size of the nanocrystallites is studied. © 2015, Pleiades Publishing, Ltd.

Журнал: Semiconductors

Выпуск журнала: Vol. 49, Is. 4

Номера страниц: 508-512

• Shamirzaev T.S. (Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russian Federation, Ural Federal University, Yekaterinburg, Russian Federation)
• Galkin N.G. (Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Sciences, Vladivostok, Russian Federation, Far Eastern Federal University, Vladivostok, Russian Federation)
• Chusovitin E.A. (Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Sciences, Vladivostok, Russian Federation)
• Goroshko D.L. (Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Sciences, Vladivostok, Russian Federation, Far Eastern Federal University, Vladivostok, Russian Federation)
• Shevlyagin A.V. (Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Sciences, Vladivostok, Russian Federation)
• Gutakovski A.K. (Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russian Federation, Novosibirsk State University, Novosibirsk, Russian Federation)
• Saranin A.A. (Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Sciences, Vladivostok, Russian Federation, Far Eastern Federal University, Vladivostok, Russian Federation)
• Latyshev A.V. (Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russian Federation)

• Scopus