Перевод названия: ТВЕРДОФАЗНЫЕ РЕАКЦИИ В GA/MN ТОНКИХ ПЛЕНКАХ: ФОРМИРОВАНИЕ С
Тип публикации: статья из журнала
Год издания: 2010
Идентификатор DOI: 10.1134/S0021364010220108
Аннотация: Experimental results concerning the solid-state synthesis of the I center dot-Ga7.7Mn2.3 phase in Ga/Mn thin films are presented. A ferromagnetic (or ferrimagnetic) state is observed in the samples annealed at temperatures above 250A degrees C. The X-ray diffraction studies demonstrate the formation of the I center dot-Ga7.7Mn2.3 pПоказать полностьюhase, which is poly-crystalline being grown on glass substrates and exhibits the preferential cube-on-cube orientation on MgO(001) substrates. A strong dependence of the perpendicular anisotropy constant K (aSyen) and of the effective biaxial anisotropy constant K (1) (eff) on the magnetic field H has been found. Owing to such dependence, the easy axis of magnetization lying in the plane of the film changes its direction approaching the film normal when the increasing magnetic field exceeds 8 kOe. The anomalous behavior of K (aSyen) and K (1) (eff) constants is explained both by the in-plane stresses arising in the course of the formation of the I center dot-Ga7.7Mn2.3 phase and by the direct dependence of magnetostriction constants on the magnetic field. For the I center dot-Ga7.7Mn2.3 phase, the saturation magnetization M (S) has been determined and the first magnetocrystalline anisotropy constant K (1) has been estimated.
Журнал: JETP LETTERS
Выпуск журнала: Vol. 92, Is. 10
Номера страниц: 687-691
ISSN журнала: 00213640
Место издания: NEW YORK
Издатель: MAIK NAUKA/INTERPERIODICA/SPRINGER