Тип публикации: статья из журнала
Год издания: 2008
Идентификатор DOI: 10.1007/s11954-008-2005-4
Ключевые слова: Crystal structure, Electronic structure, Light absorption, Nanoparticles, Surface defects, Bulk crystal, Mott insulator, Electric insulators
Аннотация: Changes in the electronic structure of Mott insulators upon transition from bulk crystals to nanoparticles have been considered. It is shown that an increase in the concentration of surface defects (in particular, oxygen vacancies for particles of transition metal oxides) leads to the formation of in-gap states of the spinpolaron oПоказать полностьюrigin inside the gap. As a result, the optical absorption spectrum of a nanoparticle undergoes a red shift with respect to a crystal. © Allerton Press, Inc. 2008.
Журнал: Bulletin of the Russian Academy of Sciences: Physics
Выпуск журнала: Vol. 72, Is. 2
Номера страниц: 156-158