Тип публикации: статья из журнала
Год издания: 2017
Идентификатор DOI: 10.1016/j.ultras.2017.01.014
Ключевые слова: Aluminum nitride, Diamond, HBAR, Piezoelectric layered structure, Quality factor, Quality parameter, UHF acoustic attenuation, Acoustic properties, Diamonds, Frequency bands, Microwave resonators, Piezoelectricity, Single crystals, Acoustic attenuation, Layered Structures, Quality factors, Quality parameters, Microwave acoustics
Аннотация: First ultrahigh frequency (UHF) investigation of quality factor Q for the piezoelectric layered structure «Al/(0 0 1)AlN/Mo/(1 0 0) diamond» has been executed in a broad frequency band from 1 up to 20 GHz. The record-breaking Q · f quality parameter up to 2.7 · 1014 Hz has been obtained close to 20 GHz. Frequency dependence of the Показать полностьюform factor m correlated with quality factor has been analyzed by means of computer simulation, and non-monotonic frequency dependence can be explained by proper features of thin-film piezoelectric transducer (TFPT). Excluding the minimal Q magnitudes measured at the frequency points associated with minimal TFPT effectiveness, one can prove a rule of Qf ? f observed for diamond on the frequencies above 1 GHz and defined by Landau-Rumer's acoustic attenuation mechanism. Synthetic IIa-type diamond single crystal as a substrate material for High-overtone Bulk Acoustic Resonator (HBAR) possesses some excellent acoustic properties in a wide microwave band and can be successfully applied for design of acoustoelectronic devices, especially the ones operating at a far UHF band. © 2017 Elsevier B.V.
Журнал: Ultrasonics
Выпуск журнала: Vol. 78
Номера страниц: 162-165