Response of a manganite-based magnetic tunnel structure to microwave radiation


Тип публикации: статья из журнала (материалы конференций, опубликованные в журналах)

Конференция: Moscow International Symposium on Magnetism, MISM 2011; Moscow; Russian Federation; 21 August 2011 through 25 August 2011;

Год издания: 2012

Идентификатор DOI: 10.4028/

Ключевые слова: Magnetic tunnel structure, Microwave detection effect, Spintronics, Magnetic materials, Magnetoelectronics, Manganese oxide, Microwaves, Current voltage characteristics, Magnetism, Parallel flow, Current flowing, Current-in-plane geometry, Magnetic tunnels, Magnetization dynamics, Microwave detection, Non-Linearity, Rectification effects, Spin-polarized currents, Voltage signals, Microwave-induced, Electric rectifiers

Аннотация: We demonstrate that a magnetic tunnel structure irradiated by microwaves can generate a significant voltage signal due to the rectification effect. The measurements were carried out using current-in-plane geometry with a current flowing parallel to the interfaces in the structure. A value of the microwave-induced voltage strongly dПоказать полностьюepends on a bias current and can be driven by a magnetic field. The rectification effect is discussed both in "Classical" terms of nonlinearity of the current-voltage characteristic and using a mechanism that involves the interplay between the spinpolarized current and magnetization dynamics in the magnetic tunnel structure. © (2012) Trans Tech Publications.

Ссылки на полный текст


Журнал: Solid State Phenomena

Выпуск журнала: Vol. 190

Номера страниц: 125-128


  • Volkov N.V. (Institute of Space Technology,Siberian State Aerospace University)
  • Rautskiy M.V. (Siberian Branch,Kirensky Institute of Physics,Russian Academy of Sciences)
  • Eremin E.V. (Institute of Space Technology,Siberian State Aerospace University)
  • Patrin G.S. (Institute of Engineering Physics and Radio Electronics,Siberian Federal University)
  • Kim P.D. (Siberian Branch,Kirensky Institute of Physics,Russian Academy of Sciences)
  • Lee C.G. (School of Nano and Advanced Materials Engineering,Changwon National University)