Synthesis of ferromagnetic germanides in 40Ge/60Mn films: magnetic and structural properties


Тип публикации: доклад, тезисы доклада, статья из сборника материалов конференций

Конференция: Euro-Asian Symposium onTrends in MAGnetism - Nanomagnetism (EASTMAG); Vladivostok, RUSSIA; Vladivostok, RUSSIA

Год издания: 2014

Идентификатор DOI: 10.4028/

Ключевые слова: solid-state reactions, spinodal decomposition, manganese germanides, diluted semiconductors, Curie temperature, Ferromagnetic materials, Ferromagnetism, Germanium, Germanium compounds, Magnetization, Nanomagnetics, Phase separation, Photoelectron spectroscopy, Solid state reactions, X ray diffraction, Annealing temperatures, Ferromagnetic phase, Germanides, Initiation temperature, Moving forces, Photoelectron spectrum, Room temperature, Manganese

Аннотация: Solid-state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy and magnetic measurements. The films have a nominal atomic ratio Ge: Mn = 40: 60 and are investigated at temperatures from 50 to 500 degrees C. It is established that after annealing at similar to 120 degreeПоказать полностьюs C,the ferromagnetic Mn5Ge3 phase is the first phase to form at the 40Ge/60Mn interface. Increasing the annealing temperature to 500 degrees C leads to the formation of the ferromagnetic phase with a Curie temperature TC similar to 360 K and magnetization MS similar to 140-200 emu/cc at room temperature. Analysis of X-ray diffraction patterns and the photoelectron spectra suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn5Ge3 lattice and the formation of the Nowotny phase Mn5Ge3CxOy. The initiation temperature (similar to 120 degrees C) of the Mn5Ge3 phase is the same both for solid-state reactions in Ge/Mn films, as well as for phase separation in GexMn1-x diluted semiconductors. We conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn1-x diluted semiconductors.

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Выпуск журнала: Vol. 215

Номера страниц: 167-172

ISSN журнала: 10120394

Место издания: STAFA-ZURICH



  • Myagkov V.G. (Kirensky Institute of Physics, RAS SB)
  • Matsunin A.A. (Kirensky Institute of Physics, RAS SB)
  • Zhigalov V.S. (Kirensky Institute of Physics, RAS SB)
  • Bykova L.E. (Kirensky Institute of Physics, RAS SB)
  • Tambasov I.A. (Kirensky Institute of Physics, RAS SB)
  • Patrin G.S. (Siberian Federal University)
  • Velikanov D.A. (Siberian Federal University)
  • Mikhlin Y.L. (Institute of Chemistry and Chemical Technology, RAS SB)
  • Bondarenko G.N. (Institute of Chemistry and Chemical Technology, RAS SB)