Тип публикации: статья из журнала

Год издания: 2010

Идентификатор DOI: 10.1134/S0021364010170170

Аннотация: Electronic band structure and energetic stability of two types of aOE (c) 110 > and aOE (c) 001 > oriented silicon nanowires in beta-Sn phase with the surface terminated by hydrogen atoms were studied using density functional theory. It was found that beta-Sn nanowires are metastable with zero band gap against to nanowires in diamoПоказать полностьюnd phase. The relative energy of the studied wires tends to the energy of the bulk silicon crystal in beta-Sn phase.

Журнал: JETP LETTERS

Выпуск журнала: Vol. 92, Is. 5

Номера страниц: 352-355

ISSN журнала: 00213640

Место издания: NEW YORK

Издатель: MAIK NAUKA/INTERPERIODICA/SPRINGER

• Sorokin P.B. (Emanuel Institute of Biochemical Physics,Russian Academy of Sciences)
• Avramov P.V. (Advanced Science Research Center,Japan Atomic Energy Agency)
• Demin V.A. (Siberian Federal University)
• Chernozatonskii L.A. (Emanuel Institute of Biochemical Physics,Russian Academy of Sciences)

• Web of Science Core Collection
• Scopus
• Ядро РИНЦ (eLIBRARY.RU)
• Список ВАК