Тип публикации: доклад, тезисы доклада, статья из сборника материалов конференций

Конференция: Asian School-Conference on Physics and Technology of Nanostructured Materials; Vladivostok; Russian Federation; Vladivostok; Russian Federation

Год издания: 2019

Идентификатор DOI: 10.4028/www.scientific.net/KEM.806.10

Ключевые слова: 2D semiconductors, Ab initio calculations, Heterostructures, NiI2, Transition metal dichalcogenides

Аннотация: The electronic structure of nickel iodide monolayer in NiI2/ScX2 (X = S, Se and Te) and NiI2/NiTe2 heterostructures was investigated by density functional theory (DFT). The spin-asymmetric semiconducting behavior of NiI2 monolayer in these interfaces was

Журнал: Key Engineering Materials

Выпуск журнала: Vol. 806 KEM

Номера страниц: 10-16

ISSN журнала: 10139826

Издатель: Trans Tech Publications Ltd

• Mikhaleva N.S. (Siberian Federal University, av. Svobodny 79, Krasnoyarsk, 660041, Russian Federation)
• Visotin M.A. (Siberian Federal University, av. Svobodny 79, Krasnoyarsk, 660041, Russian Federation; L.V. Kirensky Institute of Physics, Akademgorodok 50, Krasnoyarsk, 660036, Russian Federation)
• Popov Z.I. (L.V. Kirensky Institute of Physics, Akademgorodok 50, Krasnoyarsk, 660036, Russian Federation, National University of Science and Technology “MISiS”, Leninsky pr. 4, Moscow, 119049, Russian Federation)

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