Тип публикации: статья из журнала
Год издания: 1992
Ключевые слова: Additives, Boron compounds, Composition effects, Crystal growth, Fluxes, Impurities, Oxides, Semiconductor materials, Viscosity measurement, Activation energy, Molten materials
Аннотация: Viscosity of melts based on boron oxide with additions (mass.%) up to 15SiO2, 6Al2O3, 1In2O3, Ga2O3, La2O3 and Nd2O3 is studied by the vibrational method depending upon concentration and temperature. Boron oxide is used as a flux at production monocrystals of semiconductive compounds, and uncontrolable contamination with the crucibПоказать полностьюle material (SiO2) can take place. The results of viscosity measurements shown that additions of oxides of elements from the 3rd group the Periodical system decrease the viscosity of boron oxide, and the obtained functions of viscosity and temperature are not described by exponential equation. With SiO2 concentration increase, the growth of B2O3-SiO2 melts viscosity is observed. That can be caused by both the increase of temperature of liquidus with SiO2 addition, and the formation of more complex polymeric structures at mixing these 2 oxides.
Выпуск журнала: Is. 4
Номера страниц: 40-45