Тип публикации: доклад, тезисы доклада, статья из сборника материалов конференций

Конференция: International Conference on High-Tech and Innovations in Research and Manufacturing, HIRM 2019

Год издания: 2019

Идентификатор DOI: 10.1088/1742-6596/1353/1/012062

Аннотация: Both Sb-doped Germanium and Ge-Si solid solution single crystals with resistivity from 1.5 to 7 Ω•cm were grown using the Czochralski method. The optical transmission of single crystals and the stability of their optical properties were studied by infrared Fourier spectroscopy at a wavelength of 10.6 μm and temperature range from 2Показать полностью5 to 60 °C. It was found that decreasing the background impurities concentration leads to the reduction of the infrared absorption at room temperature while not affecting the thermal stability of the optical properties. Thermal stability of the optical properties of Sb-doped germanium single crystals increases by adding from 0.2 to 0.8 at % of silicon. © 2019 Published under licence by IOP Publishing Ltd.

Журнал: Journal of Physics: Conference Series

Выпуск журнала: Vol. 1353, Is. 1

Номера страниц: 12062

ISSN журнала: 17426588

Издатель: Institute of Physics Publishing

• Shimanskii A.F. (Siberian Federal University, 79 Svobodny Avenue, Krasnoyarsk, 660041, Russian Federation)
• Gorodishcheva A.N. (Reshetnev Siberian State University of Science and Technology, 31 Krasnoyarsky Rabochy Avenue, Krasnoyarsk, 660037, Russian Federation)
• Kopytkova S.A. (JSC GERMANIUM, Building 107, 1 Transportny highway, Krasnoyarsk, 660027, Russian Federation)
• Kulakovskaya T.V. (JSC GERMANIUM, Building 107, 1 Transportny highway, Krasnoyarsk, 660027, Russian Federation)

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