Electronic Transitions in the VBO3 Single Crystal at High Pressures


Тип публикации: статья из журнала

Год издания: 2008

Идентификатор DOI: 10.1134/S0021364008230136

Ключевые слова: 74.62.Fj, 75.50.-y, 78.70.En, 81.40.Rs

Аннотация: Optical absorption spectra of single crystals of the ferromagnetic semiconductor VBO3 are studied at high pressures up to 70 GPa achieved in a diamond-anvil cell. An electronic transition accompanied by sharp changes in the optical parameters and a decrease in the optical gap from E-0 = 3.02 eV to 2.25 eV is found at the pressure PПоказать полностью-C = 30 GPa. The gap does not disappear in the high-pressure phase and its value becomes typical of semiconductors. This is indicative of a semiconductor-semiconductor transition. The transition to the metallic state may occur at the critical pressure P-met similar to 290 GPa.

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Выпуск журнала: Vol. 88, Is. 11

Номера страниц: 762-766

ISSN журнала: 00213640

Место издания: NEW YORK



  • Gavriliuk A.G. (Institute for High Pressure Physics,Russian Academy of Sciences)
  • Lyubutin I.S. (Shubnikov Institute of Crystallography,Russian Academy of Sciences)
  • Kazak N.V. (Kirensky Institute of Physics, Siberian Branch,Russian Academy of Sciences)
  • Ovchinnikov S.G. (Siberian Federal University)

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