Dependence of the critical radius of partial dislocation loops on the stacking fault energy in semiconductors

Описание

Тип публикации: статья из журнала

Год издания: 2014

Идентификатор DOI: 10.1134/S1063783414040167

Аннотация: The dislocation loop size distribution in semiconductors CdTe, ZnTe, ZnSe, ZnS, CdS, GaAs, Si, and Ge has been studied using transmission electron microscopy. The experimental results have been compared with theoretical computations of the critical radii of the transition of partial dislocation loops to full ones with allowance forПоказать полностьюthe dislocation loop formation energy and stacking fault energy of the materials. It has been shown that the critical radius depends on the stacking fault energy and is an important characteristic in the analysis of the defect formation processes in semiconductors.

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Издание

Журнал: PHYSICS OF THE SOLID STATE

Выпуск журнала: Vol. 56, Is. 4

Номера страниц: 720-722

ISSN журнала: 10637834

Место издания: NEW YORK

Издатель: MAIK NAUKA/INTERPERIODICA/SPRINGER

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