Тип публикации: статья из журнала
Год издания: 2014
Идентификатор DOI: 10.1134/S1063783414040167
Аннотация: The dislocation loop size distribution in semiconductors CdTe, ZnTe, ZnSe, ZnS, CdS, GaAs, Si, and Ge has been studied using transmission electron microscopy. The experimental results have been compared with theoretical computations of the critical radii of the transition of partial dislocation loops to full ones with allowance forПоказать полностьюthe dislocation loop formation energy and stacking fault energy of the materials. It has been shown that the critical radius depends on the stacking fault energy and is an important characteristic in the analysis of the defect formation processes in semiconductors.
Журнал: PHYSICS OF THE SOLID STATE
Выпуск журнала: Vol. 56, Is. 4
Номера страниц: 720-722
ISSN журнала: 10637834
Место издания: NEW YORK
Издатель: MAIK NAUKA/INTERPERIODICA/SPRINGER