Тип публикации: статья из журнала
Год издания: 2022
Идентификатор DOI: 10.1016/j.talanta.2021.123092
Ключевые слова: back gate nanowire fet, schottky contacts fet, si nanowire biosensor, silicon-on-insulator
Аннотация: A top-down nanofabrication approach involving molecular beam epitaxy and electron beam lithography was used to obtain silicon nanowire-based back gate field-effect transistors with Schottky contacts on silicon-on-insulator (SOI) wafers. The resulting device is applied in biomolecular detection based on the changes in the drain-sourПоказать полностьюce current (IDS). In this context, we have explained the physical mechanisms of charge carrier transport in the nanowire using energy band diagrams and numerical 2D simulations in TCAD. The results of the experiment and numerical modeling matched well and may be used to develop novel types of nanowire-based biosensors. © 2021 Elsevier B.V.
Журнал: Talanta
Выпуск журнала: Vol. 239
Номера страниц: 123092
ISSN журнала: 00399140
Издатель: Elsevier B.V.