TEM STUDY OF THE FORMATION OF STRUCTURAL DEFECTS IN ION-IMPLANTED SILICON AT DEPTHS OF H LESS-THAN-OR-EQUAL-TO RBARP AND H GREATER-THAN-OR-EQUAL-TO 2RBARP
TEM STUDY OF THE FORMATION OF STRUCTURAL DEFECTS IN ION-IMPLANTED SILICON AT DEPTHS OF H LESS-THAN-OR-EQUAL-TO RBARP AND H GREATER-THAN-OR-EQUAL-TO 2RBARP