Electronic structure of alpha-SrB4O7: experiment and theory


Тип публикации: статья из журнала

Год издания: 2013

Идентификатор DOI: 10.1088/0953-8984/25/8/085503

Ключевые слова: Ab initio method, Electronic parameters, Optical-quality crystals, Photoemission spectra, Powder samples, X ray photoemission spectroscopy, XPS measurements, Electronic structure, Photoelectron spectroscopy, Band structure, bismuth, oxide, strontium, article, chemical model, chemical structure, chemistry, computer simulation, electric conductivity, electronics, X ray photoelectron spectroscopy, Models, Chemical, Molecular Structure, Oxides

Аннотация: The investigation of valence band structure and electronic parameters of constituent element core levels of alpha-SrB4O7 has been carried out with x-ray photoemission spectroscopy. Optical-quality crystal alpha-SrB4O7 has been grown by the Czochralski method. Detailed photoemission spectra of the element core levels have been recorПоказать полностьюded from the powder sample under excitation by nonmonochromatic Al K alpha radiation (1486.6 eV). The band structure of alpha-SrB4O7 has been calculated by ab initio methods and compared to XPS measurements. It has been found that the band structure of alpha-SrB4O7 is weakly dependent on the Sr-related states.

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Выпуск журнала: Vol. 25, Is. 8

ISSN журнала: 09538984

Место издания: BRISTOL



  • Atuchin V.V. (Laboratory of Optical Materials and Structures,Institute of Semiconductor Physics,SB RAS)
  • Kesler V.G. (Laboratory of Physical Bases of Integrated Microelectronics,Institute of Semiconductor Physics,SB RAS)
  • Zaitsev A.I. (Siberian Federal University)
  • Molokeev M.S. (Laboratory of Crystal Physics,Institute of Physics,SB RAS)
  • Aleksandrovsky A.S. (Laboratory of Coherent Optics,Institute of Physics,SB RAS)
  • Kuzubov A.A. (Siberian Federal University)
  • Ignatova N.Y. (Siberian Federal University)

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