Modeling structural defect formation in cadmium telluride during electron irradiation

Описание

Тип публикации: доклад, тезисы доклада, статья из сборника материалов конференций

Конференция: International Scientific Conference Reshetnev Readings; Krasnoyarsk, RUSSIA; Krasnoyarsk, RUSSIA

Год издания: 2019

Идентификатор DOI: 10.1088/1757-899X/467/1/012007

Ключевые слова: Electron irradiation, II-VI semiconductors, Transmission electron microscopy, Dislocation loop, Interstitial atoms, Irradiation time, Structural defect, Cadmium telluride

Аннотация: We have conducted the formation of interstitial atoms and vacancies and made their clusters in the form of dislocation loops and voids in cadmium telluride under irradiation by electrons. We have calculated dependences of the radii of dislocation loops an

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Издание

Журнал: IOP Conference Series: Materials Science and Engineering

Выпуск журнала: Vol. 467, Is. 1

Номера страниц: 12007

ISSN журнала: 17578981

Издатель: Institute of Physics Publishing

Персоны

  • Loginov Yu Yu (Reshetnev Siberian State Univ Sci & Technol, Krasnoyarsk 660037, Russia)
  • Mozzherin A.V (Siberian Fed Univ, Krasnoyarsk 660041, RussiaProceedings Paper)
  • Paklin N.N. (Siberian Fed Univ, Krasnoyarsk 660041, RussiaProceedings Paper)