The electronic and optical properties of a narrow-band red-emitting nanophosphor K2NaGaF6:Mn4+ for warm white light-emitting diodes

Описание

Тип публикации: статья из журнала

Год издания: 2018

Идентификатор DOI: 10.1039/c7tc05098d

Аннотация: Recently, as a key red component in the development of warm white light-emitting diodes (WLEDs), Mn4+-doped fluorides with narrow red emission have sparked rapidly growing interest because they improve color rendition and enhance the visual energy efficiency. Herein, a red nanophosphor, K2NaGaF6:Mn4+, with a diameter of 150-250 nm Показать полностьюhas been synthesized using a simple co-precipitation method. Rietveld refinement reveals that it crystallizes in the space group Fm3m with the cell parameter a = 8.25320(4) Å. The exchange charge model (ECM) has been used to calculate the energy levels of Mn4+ ions in K2NaGaF6, which match well with the experimental spectra. The as-synthesized phosphor exhibits a narrow red emission at around 630 nm (spin-forbidden 2Eg → 4A2 transition of Mn4+ ions) when excited at 365 nm (4A2g → 4T1g) and 467 nm (4A2g → 4T2g), with a quantum efficiency (QE) of 61% and good resistance to thermal quenching. Based on the structure, the formation mechanism of ZPL has been discussed. In addition, the concentration-dependent decay curves of Mn4+ in K2NaGaF6 were fitted using the Inokuti-Hirayama model, suggesting that the dipole-dipole interactions determine the concentration quenching. Finally, encouraged by the good performance, a warm LED with a CRI of 89.4 and CCT of 3779 K was fabricated by employing the title nanophosphor as the red component. Our findings suggest that K2NaGaF6:Mn4+ can be a viable candidate for the red phosphor used in warm WLEDs. © 2018 The Royal Society of Chemistry.

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Издание

Журнал: Journal of Materials Chemistry C

Выпуск журнала: Vol. 6, Is. 12

Номера страниц: 3016-3025

ISSN журнала: 20507534

Издатель: Royal Society of Chemistry

Авторы

  • Jiang Chunyan (South China Univ Technol, China Germany Res Ctr Photon Mat & Device, State Key Lab Luminescent Mat & Devices, Sch Mat Sci & Engn, Guangzhou 510641, Guangdong, Peoples R China; South China Univ Technol, Sch Mat Sci & Engn, Guangdong Prov Key Lab Fiber Laser Mat & Appl Tec, Guangzhou 510641, Guangdong, Peoples R China)
  • Brik Mikhail G. (Chongqing Univ Posts & Telecommun, Coll Math & Phys, Chongqing 400065, Peoples R China; Univ Tartu, Inst Phys, W Ostwald Str 1, EE-50411 Tartu, Estonia; Jan Dlugosz Univ, Inst Phys, Armii Krajowej 13-15, PL-42200 Czestochowa, Poland)
  • Li Lihua (South China Univ Technol, China Germany Res Ctr Photon Mat & Device, State Key Lab Luminescent Mat & Devices, Sch Mat Sci & Engn, Guangzhou 510641, Guangdong, Peoples R China; South China Univ Technol, Sch Mat Sci & Engn, Guangdong Prov Key Lab Fiber Laser Mat & Appl Tec, Guangzhou 510641, Guangdong, Peoples R China)
  • Li Liyi (South China Univ Technol, China Germany Res Ctr Photon Mat & Device, State Key Lab Luminescent Mat & Devices, Sch Mat Sci & Engn, Guangzhou 510641, Guangdong, Peoples R China; South China Univ Technol, Sch Mat Sci & Engn, Guangdong Prov Key Lab Fiber Laser Mat & Appl Tec, Guangzhou 510641, Guangdong, Peoples R China)
  • Peng Jie (South China Univ Technol, China Germany Res Ctr Photon Mat & Device, State Key Lab Luminescent Mat & Devices, Sch Mat Sci & Engn, Guangzhou 510641, Guangdong, Peoples R China; South China Univ Technol, Sch Mat Sci & Engn, Guangdong Prov Key Lab Fiber Laser Mat & Appl Tec, Guangzhou 510641, Guangdong, Peoples R China)
  • Wu Jianan (South China Univ Technol, China Germany Res Ctr Photon Mat & Device, State Key Lab Luminescent Mat & Devices, Sch Mat Sci & Engn, Guangzhou 510641, Guangdong, Peoples R China; South China Univ Technol, Sch Mat Sci & Engn, Guangdong Prov Key Lab Fiber Laser Mat & Appl Tec, Guangzhou 510641, Guangdong, Peoples R China)
  • Molokeev Maxim S. (Fed Res Ctr KSC SB RAS, Lab Crystal Phys, Kirensky Inst Phys, Krasnoyarsk 660036, Russia; Siberian Fed Univ, Krasnoyarsk 660041, Russia)
  • Wong Ka-Leung (Hong Kong Baptist Univ, Dept Chem, Kowloon Tong, Hong Kong, Peoples R China)
  • Peng Mingying (South China Univ Technol, China Germany Res Ctr Photon Mat & Device, State Key Lab Luminescent Mat & Devices, Sch Mat Sci & Engn, Guangzhou 510641, Guangdong, Peoples R China; South China Univ Technol, Sch Mat Sci & Engn, Guangdong Prov Key Lab Fiber Laser Mat & Appl Tec, Guangzhou 510641, Guangdong, Peoples R China; Wuyi Univ, Sch Appl Phys & Mat, Jiangmen 529020, Guangdong, Peoples R China)

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