CsCu5Se3: A Copper-Rich Ternary Chalcogenide Semiconductor with Nearly Direct Band Gap for Photovoltaic Application

Описание

Тип публикации: статья из журнала

Год издания: 2018

Идентификатор DOI: 10.1021/acs.chemmater.7b05104

Аннотация: Discovery of new semiconductor candidates with suitable band gaps is a challenge for optoelectronic application. A facile solvothermal synthesis of a new ternary chalcogenide semiconductor CsCu5Se3 is reported. The telluride CsCu5Te3 is also predicted to

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Издание

Журнал: Chemistry of Materials

Выпуск журнала: Vol. 30, Is. 3

Номера страниц: 1121-1126

ISSN журнала: 08974756

Издатель: American Chemical Society

Персоны

  • Xia Z. (Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, China)
  • Fang H. (Department of Chemistry, Tsinghua University, Beijing, China)
  • Zhang X. (College of Electronic Science and Technology, Shenzhen University, Guangdong, China)
  • Molokeev M.S. (Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation, Department of Physics, Far Eastern State Transport University, Khabarovsk, Russian Federation, Siberian Fede)
  • Gautier R. (Institut des Mat?riaux Jean Rouxel (IMN), Universit? de Nantes, CNRS, 2 rue de la Houssini?re, Nantes, Cedex, France)
  • Yan Q. (Department of Chemistry, Tsinghua University, Beijing, China)
  • Wei S.-H. (Beijing Computational Science Research Center, Beijing, China)
  • Poeppelmeier K.R. (Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, United States)