Enhancement of red emission and site analysis in Eu2+ doped new-type structure Ba3CaK(PO4)(3) for plant growth white LEDs

Описание

Тип публикации: статья из журнала

Год издания: 2019

Идентификатор DOI: 10.1016/j.cej.2018.09.036

Ключевые слова: Phosphor, Ba3CaK(PO4)(3), Sites-dependent photoluminescence, Plant growth, White LEDs

Аннотация: A novel compound Ba3CaK(PO4)(3) (BCKP) with new-type structure was synthesized and its structure was determined by X-ray diffraction Rietveld refinement, in which crystal structure consists of Ba1O(9), Ba2O(12), Ba3O(9), CaO8 and KO10 polyhedra, that's fi

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Издание

Журнал: CHEMICAL ENGINEERING JOURNAL

Выпуск журнала: Vol. 356

Номера страниц: 236-244

ISSN журнала: 13858947

Место издания: LAUSANNE

Издатель: ELSEVIER SCIENCE SA

Авторы

  • Xiang Jinmeng (Northwest Univ, Inst Photon & Photon Technol, Natl Photoelect Technol & Funct Mat, Natl Key Lab Photoelect Technol & Funct Mat Shaan, Xian 710069, Shaanxi, Peoples R China; Northwest Univ, Inst Photon & Photon Technol, Applicat Sci & Technol Int Cooperat Base, Xian 710069, Shaanxi, Peoples R China; Northwest Univ, Dept Phys, Xian 710069, Shaanxi, Peoples R China)
  • Zheng Jiming (Northwest Univ, Inst Photon & Photon Technol, Natl Photoelect Technol & Funct Mat, Natl Key Lab Photoelect Technol & Funct Mat Shaan, Xian 710069, Shaanxi, Peoples R China; Northwest Univ, Inst Photon & Photon Technol, Applicat Sci & Technol Int Cooperat Base, Xian 710069, Shaanxi, Peoples R China; Northwest Univ, Dept Phys, Xian 710069, Shaanxi, Peoples R China)
  • Zhou Ziwei (Northwest Univ, Inst Photon & Photon Technol, Natl Photoelect Technol & Funct Mat, Natl Key Lab Photoelect Technol & Funct Mat Shaan, Xian 710069, Shaanxi, Peoples R China; Northwest Univ, Inst Photon & Photon Technol, Applicat Sci & Technol Int Cooperat Base, Xian 710069, Shaanxi, Peoples R China; Northwest Univ, Dept Phys, Xian 710069, Shaanxi, Peoples R China)
  • Suo Hao (Northwest Univ, Inst Photon & Photon Technol, Natl Photoelect Technol & Funct Mat, Natl Key Lab Photoelect Technol & Funct Mat Shaan, Xian 710069, Shaanxi, Peoples R China; Northwest Univ, Inst Photon & Photon Technol, Applicat Sci & Technol Int Cooperat Base, Xian 710069, Shaanxi, Peoples R China; Northwest Univ, Dept Phys, Xian 710069, Shaanxi, Peoples R China)
  • Zhao Xiaoqi (Northwest Univ, Inst Photon & Photon Technol, Natl Photoelect Technol & Funct Mat, Natl Key Lab Photoelect Technol & Funct Mat Shaan, Xian 710069, Shaanxi, Peoples R China; Northwest Univ, Inst Photon & Photon Technol, Applicat Sci & Technol Int Cooperat Base, Xian 710069, Shaanxi, Peoples R China; Northwest Univ, Dept Phys, Xian 710069, Shaanxi, Peoples R China)
  • Zhou Xianju (Chongqing Univ Posts & Telecommun, Sch Sci, Chongqing 400065, Peoples R China)
  • Zhang Niumiao (Northwest Univ, Inst Photon & Photon Technol, Natl Photoelect Technol & Funct Mat, Natl Key Lab Photoelect Technol & Funct Mat Shaan, Xian 710069, Shaanxi, Peoples R China; Northwest Univ, Dept Phys, Xian 710069, Shaanxi, Peoples R China)
  • Molokeev Maxim S. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Lab Crystal Phys, Krasnoyarsk 660036, Russia; Siberian Fed Univ, Krasnoyarsk 660041, Russia; Far Eastern State Transport Univ, Dept Phys, Khabarovsk 680021, Russia)
  • Guo Chongfeng (Northwest Univ, Inst Photon & Photon Technol, Natl Photoelect Technol & Funct Mat, Natl Key Lab Photoelect Technol & Funct Mat Shaan, Xian 710069, Shaanxi, Peoples R China; Northwest Univ, Dept Phys, Xian 710069, Shaanxi, Peoples R China)

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