Reversible UV induced metal-semiconductor transition in In 2O3 thin films prepared by autowave oxidation

Описание

Тип публикации: статья из журнала

Год издания: 2014

Идентификатор DOI: 10.1088/0268-1242/29/8/082001

Ссылки на полный текст

Издание

Журнал: Semiconductor Science and Technology

Выпуск журнала: Т.29, 8

Номера страниц: 082001

ISSN журнала: 02681242

Издатель: Institute of Physics and IOP Publishing Limited

Авторы

  • Tambasov I.A. (Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences)
  • Maygkov V.G. (Reshetnev Siberian State Aerospace University)
  • Tarasov A.S. (Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences)
  • Ivanenko A.A. (Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences)
  • Bykova L.E. (Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences)
  • Nemtsev I.V. (Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences)
  • Eremin E.V. (Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences)
  • Yozhikova E.V. (Reshetnev Siberian State Aerospace University)

Вхождение в базы данных

  • eLIBRARY.RU (цитирований 12)
  • Web of Science
  • Scopus