Тип публикации: статья из журнала

Год издания: 2014

Идентификатор DOI: 10.1088/0268-1242/29/8/082001

Журнал: Semiconductor Science and Technology

Выпуск журнала: Т. 29, № 8

Номера страниц: 082001

ISSN журнала: 02681242

Издатель: Institute of Physics and IOP Publishing Limited

• Tambasov I.A. (Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences)
• Maygkov V.G. (Reshetnev Siberian State Aerospace University)
• Tarasov A.S. (Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences)
• Ivanenko A.A. (Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences)
• Bykova L.E. (Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences)
• Nemtsev I.V. (Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences)
• Eremin E.V. (Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences)
• Yozhikova E.V. (Reshetnev Siberian State Aerospace University)

• Ядро РИНЦ (eLIBRARY.RU)