Тип публикации: статья из журнала

Год издания: 2020

Идентификатор DOI: 10.1002/adom.201901608

Ключевые слова: phosphors, photoluminescence, white light-emitting diodes

Аннотация: Phosphor-converted white light-emitting diodes (LEDs) are currently playing key roles in the lighting and display industries and trigger urgent demands for the discovery of “good” phosphors with high quantum efficiency, improved thermal stability, and controllable excitation/emission properties. Herein, a general and efficient heteПоказать полностьюrovalent substitution strategy is demonstrated in K2HfSi3O9:Eu2+ achieved by Ln3+ (Ln = Gd, Tb, Dy, Tm, Yb, and Lu) doping to optimize luminescence properties, and as an example, the Lu3+ substitution leads to improvement of emission intensity and thermal stability, as well as tunable emission color from blue to cyan. The structural stability and Eu2+ occupation via Lu3+ doping have been revealed by the structural elaboration and density functional theory calculations, respectively. It is shown that heterovalent substitution allows predictive control of site preference of luminescent centers and therefore provides a new method to optimize the solid-state phosphors for LEDs. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Журнал: Advanced Optical Materials

Выпуск журнала: Vol. 8, Is. 2

Номера страниц: 1901608

ISSN журнала: 21951071

Издатель: Wiley-VCH Verlag

• Cheng C. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
• Ning L. (Anhui Key Laboratory of Optoelectric Materials Science and Technology, Key Laboratory of Functional Molecular Solids, Ministry of Education, Anhui Normal University, Wuhu, Anhui 241000, China)
• Ke X. (Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing, 100124, China)
• Molokeev M.S. (Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Department of Engineering Physics and Radioelectronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation, Department of Physics, Far Eastern State Transport University, Khabarovsk, 680021, Russian Federation)
• Wang Z. (Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing, 100124, China)
• Zhou G. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
• Chuang Y.-C. (National Synchrotron Radiation Research Center, Hsinchu, 300, Taiwan)
• Xia Z. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China, State Key Laboratory of Luminescent Materials and Devices and Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, South China University of Technology, Guangzhou, 510641, China)

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