Multiphysical simulation analysis of the dislocation structure in germanium single crystals

Описание

Тип публикации: статья из журнала

Год издания: 2016

Идентификатор DOI: 10.1134/S1063784216090206

Аннотация: To grow high-quality germanium crystals is one of the most important problems of growth industry. The dislocation density is an important parameter of the quality of single crystals. The dislocation densities in germanium crystals 100 mm in diameter, which have various shapes of the side surface and are grown by the Czochralski tecПоказать полностьюhnique, are experimentally measured. The crystal growth is numerically simulated using heat-transfer and hydrodynamics models and the Alexander-Haasen dislocation model in terms of the CGSim software package. A comparison of the experimental and calculated dislocation densities shows that the dislocation model can be applied to study lattice defects in germanium crystals and to improve their quality.

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Издание

Журнал: TECHNICAL PHYSICS

Выпуск журнала: Vol. 61, Is. 9

Номера страниц: 1286-1291

ISSN журнала: 10637842

Место издания: NEW YORK

Издатель: MAIK NAUKA/INTERPERIODICA/SPRINGER

Авторы

  • Podkopaev O.I. (AO Germanii)
  • Artemyev V.V. (STR Group,Inc.)
  • Smirnov A.D. (STR Group,Inc.)
  • Mamedov V.M. (STR Group,Inc.)
  • Sid'ko A.P. (STR Group,Inc.)
  • Kalaev V.V. (STR Group,Inc.)
  • Kravtsova E.D. (Siberian Federal University)
  • Shimanskii A.F. (Siberian Federal University)

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