Тип публикации: статья из журнала
Год издания: 2014
Идентификатор DOI: 10.1016/S1003-6326(14)63455-5
Ключевые слова: magnetoresistance, hybrid structure, Schottky diode, Magnetic polarity, Schottky barrier diodes, Semiconductor devices, Semiconductor diodes, Back to back Schottky, Giant magnetoresistive, Magneto-resistive effect, Magnetoresistance ratio, Nonequilibrium conditions, Schottky diodes, Semiconductor spintronics, Giant magnetoresistance
Аннотация: The giant magnetoresistive (MR) effect was investigated in a simple Fe/SiO2/p-Si-hybrid-structure-based device from two back-to-back Schottky diodes. The effect was revealed only under the non-equilibrium conditions caused by optical radiation. It is demonstrated that the magnetoresistance ratio attains 100 or more. The main peculiПоказать полностьюarity of the MR behavior is its strong dependence on the magnitude and the sign of the bias current across the device and, most surprisingly, upon polarity of the magnetic field. It is important that the magnetoresistive effect is implemented exclusively in the subsystem of minority charge carriers transferred to the non-equilibrium states. The development of magneto-sensitive devices of this type can give grounds for a novel direction of semiconductor spintronics.
Журнал: TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA
Выпуск журнала: Vol. 24, Is. 10
Номера страниц: 3158-3163
ISSN журнала: 10036326
Место издания: AMSTERDAM
Издатель: ELSEVIER SCIENCE BV