Doping dependence of the band structure and chemical potential in cuprates by the generalized tight-binding method

Описание

Тип публикации: статья из журнала (материалы конференций, опубликованные в журналах)

Конференция: International Conference on Modern Problems in Superconductivity; YALTA, UKRAINE; YALTA, UKRAINE

Год издания: 2003

Идентификатор DOI: 10.1142/S0217984903005500

Ключевые слова: copper derivative, calculation, chemical analysis, chemical structure, concentration (parameters), conference paper, correlation analysis, mathematical analysis, model, physics

Аннотация: Quasiparticle band structure in hole doped CuO2 layer is calculated with account for strong electron correlations in the framework of multiband p-d model. For undoped layer we obtain the charge-transfer antiferromagnetic insulator. With doping unusual impurity-like quasiparticle appears at the top of the valence band with spectral Показать полностьюweight proportional to doping concentration. In the overdoped regime the band structure in the paramagnetic phase results in the doping dependent Fermi surface in agreement to ARPES data.

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Издание

Журнал: MODERN PHYSICS LETTERS B

Выпуск журнала: Vol. 17, Is. 10.12.2017

Номера страниц: 479-486

ISSN журнала: 02179849

Место издания: SINGAPORE

Издатель: WORLD SCIENTIFIC PUBL CO PTE LTD

Авторы

  • Borisov A.A. (L. V. Kirensky Institute of Physics, Krasnoyarsk, 660036, Russian Federation)
  • Gavrichkov V.A. (Theoretical Physics Department, Krasnoyarsk State University, Krasnoyarsk, 660041, Russian Federation; L. V. Kirensky Institute of Physics, Krasnoyarsk, 660036, Russian Federation)
  • Ovchinnikov S.G. (Theoretical Physics Department, Krasnoyarsk State University, Krasnoyarsk, 660041, Russian Federation; L. V. Kirensky Institute of Physics, Krasnoyarsk, 660036, Russian Federation)

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