Тип публикации: статья из журнала

Год издания: 2016

Идентификатор DOI: 10.1134/S1063783416120179

Аннотация: ZnS crystals grown form the vapor phase and ZnS/(001)GaAs epitaxial structures grown by metalorganic vapor phase epitaxy are studied by transmission electron microscopy after in situ irradiation in an electron microscope at an electron energy of 400 keV and intensity of (1-4) x 10(19) electrons/cm(2) s. It is shown that irradiationПоказать полностьюleads to the formation of small (2.5-45 nm) dislocation loops with a density of 1.4 x 10(11) cm(-2), as well as voids and new phase inclusions ae 10 nm in size. Using the moire fringe contrast analysis, these inclusions were identified as ZnO and ZnO2.

Журнал: PHYSICS OF THE SOLID STATE

Выпуск журнала: Vol. 58, Is. 12

Номера страниц: 2468-2471

ISSN журнала: 10637834

Место издания: NEW YORK

Издатель: MAIK NAUKA/INTERPERIODICA/SPRINGER

• Loginov Yu. Yu. (Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia)
• Bril'kov A.V. (Siberian Fed Univ, Krasnoyarsk 660041, Russia)
• Mozzherin A.V. (Siberian Fed Univ, Krasnoyarsk 660041, Russia)

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