Magnetic and Electrical Properties of Co/Ge Bilayer Films

Описание

Тип публикации: статья из журнала (материалы конференций, опубликованные в журналах)

Год издания: 2014

Идентификатор DOI: 10.4028/www.scientific.net/SSP.215.348

Ключевые слова: Bilayer structure ferromagnetic metal/semiconductor, Cobalt, Coercivity, Germanium interface, Magnetization, Magnetoresistance, Schottky barrier, Cobalt, Coercive force, Magnetic films, Magnetization, Magnetoresistance, Nanomagnetics, Schottky barrier diodes, Bi-layer films, Bi-layer structure, Magnetic and electrical properties, Magnetic behavior, Magnetic layers, Magneto-resistive effect, Schottky barriers, Electric properties

Аннотация: The magnetic and electrical properties of Co/Ge bilayer films are experimentally studied. It is established that at the Co/Ge interface an intermediate magnetic layer forms. This layer affects the magnetic behavior and magnetoresistive effect in the investigated structures. © (2014) Trans Tech Publications, Switzerland.

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Издание

Журнал: (15 September 2013 through 21 September 2013, Vladivostok

Выпуск журнала: Vol. 215

Номера страниц: 348-351

Авторы

  • Patrin G.S. (Siberian Federal University)
  • Turpanov I.A. (Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch)
  • Patrin K.G. (Siberian Federal University)
  • Alekseichik E.A. (Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch)
  • Kobyakov A.V. (Siberian Federal University)
  • Yushkov V.I. (Siberian Federal University)

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