Current channel switching in the manganite-based multilayer structure

Описание

Тип публикации: статья из журнала

Год издания: 2010

Идентификатор DOI: 10.1088/1742-6596/200/5/052031

Ключевые слова: Channel switching, Current in planes, Magnetic tunnel junction, Magnetoresistive, Manganese silicide, Multilayer structures, Optical radiations, Potential barriers, Lanthanum, Magnetic fields, Manganese, Silicides, Transport properties, Tunnel junctions, Manganese oxide

Аннотация: The transport properties of the structure La0.7Sr 0.3MnO3/depleted manganite layer/MnSi have been studied. The depleted manganite layer serves as a potential barrier between the ferromagnetic conducting La0.7Sr0.3MnO3 and MnSi layers by forming a magnetic tunnel junction. The study in the CIP (current-in-plane) geometry has revealeПоказать полностьюd the effect of current channel switching between the manganite layer and the manganese silicide layer with higher conductivity. The effect is controlled by bias current, magnetic field, and optical radiation. Such switching is responsible for the features of the transport properties and the magnetoresistive and photovoltaic effects in the structure. © 2010 IOP Publishing Ltd.

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Издание

Журнал: International Conference on Magnetism, ICM 2009 (26 July 2009 through 31 July 2009, Karlsruhe

Выпуск журнала: Vol. 200, Is. SECTION 5

ISSN журнала: 17426588

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