Тип публикации: статья из журнала
Год издания: 1997
Аннотация: The de Haas-van Alphen (dHvA) effect is considered in antiferromagnetic semimetals in the vicinity of the spin-flip transition (SFT). The energy spectrum of valence-band holes is calculated with allowance made for the magnetic-polaron effect and a canting of the sublattices of the antiferromagnetic subsystem under a magnetic field Показать полностьюH. In this case, the position of the bottom of the hole band depends strongly on H, which results in the qualitatively different behavior of the number of filled electronic Landau levels NL before and after the SFT. At fields above the transition point, the usual decrease of NL is observed with increasing H, whereas below the transition point, this number increases. Because of this, the period of dHvA oscillations may change sharply in passing through Hc. The critical concentration of band carriers ncr at the point Hc, which separates antiferromagnetic semimetals showing qualitatively different behavior of the dHvA effect in the vicinity of the SFT point, was found. At low carrier concentrations, the period of dHvA oscillations is shorter below Hc than above it. Such a situation was observed experimentally in the CeCu2Si2 compound. When the concentration is relatively high, the dHvA oscillations have a smaller frequency below the transition point than above it.
Журнал: Physics of Metals and Metallography
Выпуск журнала: Vol. 84, Is. 3
Номера страниц: 220-228