Studies of ferroelectric and magnetic phase transitions in multiferroic PbFe0.5Ta0.5O3-PbTiO3 solid solution ceramics

Описание

Тип публикации: статья из журнала

Год издания: 2014

Идентификатор DOI: 10.1007/s10853-014-8376-z

Ключевые слова: Ceramic materials, Ferroelectricity, Magnetization, Permittivity, Spin glass, Compositional evolution, Compositional range, Curie-Weiss temperature, Dielectric permittivities, Frequency dependence, Magnetic phase transitions, Solid solution ceramics, Zero-field-cooled, Ferroelectric ceramics

Аннотация: Dielectric, X-ray, Mossbauer and magnetization studies of (1 - x)PbFe 0.5Ta0.5O3-(x)PbTiO3 ceramics with 0 ? x ? 0.3 have been carried out to determine the compositional evolution of ferroelectric and magnetic phase transition temperatures. Addition of PbTiO3 to PbFe0.5Ta0.5O3 increases the temperature T m of the dielectric permittПоказать полностьюivity maximum, decreases both the diffusion of this maximum and its frequency dependence. However, the Curie-Weiss temperature exceeds T m for all the compositions studied, indicating that the phase transition still remains diffused. Dilution of the (Fe, Ta)-sublattice by Ti lowers the Neel temperature T N but above a certain compositional threshold (x ? 0.1) fast lowering of T N stops and a new magnetic state stable in a rather wide compositional range appears. Large difference between the zero-field-cooled (ZFC) and FC magnetization-temperature curves as well as between the temperatures of magnetic phase transition determined from Mossbauer and magnetization studies for compositions with x > 0.1 implies that this state is a spin-glass phase. © 2014 Springer Science+Business Media New York.

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Издание

Журнал: Journal of Materials Science

Выпуск журнала: Vol. 49, Is. 18

Номера страниц: 6459-6466

ISSN журнала: 00222461

Авторы

  • Raevski I.P.
  • Titov V.V.
  • Malitskaya M.A.
  • Eremin E.V.
  • Kubrin S.P.
  • Blazhevich A.V.
  • Chen H.
  • Chou C.-C.
  • Raevskaya S.I.
  • Zakharchenko I.N.
  • Sarychev D.A.
  • Shevtsova S.I.

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