Experimental and DFT study of BaLaCuS3: Direct band gap semiconductor

Описание

Тип публикации: статья из журнала

Год издания: 2021

Идентификатор DOI: 10.1016/j.jpcs.2020.109670

Ключевые слова: direct band gap, semiconductor, solar cell, sulphidation, wide band gap

Аннотация: BaLaCuS3 powder was prepared by sulphidation method. The shape of powder particles is irregular and place in the range of 10–100 μm. The electronic, elastic and vibrational properties were evaluated with the use of DFT method. According to the electronic band structure calculation the BaLaCuS3 is a direct wide band gap semiconductoПоказать полностьюr with Edg = 2.0 eV while the energy of indirect transition is equal to 2.2. eV and it indicates that the BaLaCuS3 is a promising material for efficient underwater solar cells. Calculated compressibility of BaLaCuS3 is found to be identical to germanium and zinc blende modification of zunc sulfide. © 2020 Elsevier Ltd

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Издание

Журнал: Journal of Physics and Chemistry of Solids

Выпуск журнала: Vol. 148

Номера страниц: 109670

ISSN журнала: 00223697

Персоны

  • Oreshonkov A.S. (Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, School of Engineering and Construction, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
  • Azarapin N.O. (Institute of Chemistry, Tyumen State University, Tyumen, 625003, Russian Federation)
  • Shestakov N.P. (Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation)
  • Adichtchev S.V. (Institute of Automation and Electrometry, Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation)

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